(China (Mainland))
Product Summary
The BAV199LT1G is a Dual Series Switching Diode.
Parametrics
BAV199LT1G absolute maximum ratings: (1)Reverse Voltage, VR: 70 Vdc; (2)Forward Current, IF: 215 mAdc; (3)Peak Forward Surge Current, IFM(surge): 500 mAdc; (4)Repetitive Peak Reverse Voltage, VRRM: 70 Vdc; (5)Average Rectified Forward Current (Averaged Over Any 20 ms Period), IF(AV): 715 mAdc; (6)Repetitive Peak Forward Current, IFRM: 450 mAdc; (7)Junction and Storage Temperature, TJ, Tstg: -65 to +150℃.
Features
BAV199LT1G features: (1)Low Leakage Current Applications; (2)Medium Speed Switching Times; (3)AEC.Q101 Qualified and PPAP Capable; (4)S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; (5)These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BAV199LT1G |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 215mA |
Data Sheet |
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Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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Vishay Semiconductors |
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Data Sheet |
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Diodes (General Purpose, Power, Switching) 1.0 Amp 200V 500mW |
Data Sheet |
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BAV103,135 |
NXP Semiconductors |
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Data Sheet |
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Diodes Inc. |
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