Product Summary

The BT169G is a Passivated, sensitive gate thyristor in a SOT54 plastic package, which is designed for general purpose switching and phase control applications.

Parametrics

BT169G absolute maximum ratings: (1)VDRM, VRRM, repetitive peak off-state voltages: 600 V; (2)IGM, peak gate current: 1 A; (3)VGM, peak gate voltage: 5 V; (4)VRGM, peak reverse gate voltage: 5 V; (5)PGM, peak gate power: 2 W; (6)PG(AV), average gate power, over any 20 ms period: 0.1 W; (7)Tstg, storage temperature: -40 to +150℃; (8)Tj, junction temperature: 125℃.

Features

BT169G features: (1)Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits; (2)Mounting Style: SMD/SMT; (3)Package / Case: SOT-54; (4)Packaging: Tube.

Diagrams

BT169G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BT169G,112
BT169G,112
NXP Semiconductors
SCRs .8A 600V
Data Sheet
0-1: $0.23
1-25: $0.18
25-100: $0.13
100-250: $0.09
BT169G-L,412
BT169G-L,412
NXP Semiconductors
Rectifiers Silicon Controlled Rectifier
Data Sheet
0-1: $0.19
1-25: $0.15
25-100: $0.12
100-250: $0.09
BT169G/DG,126
BT169G/DG,126
NXP Semiconductors
Rectifiers SILICON CONTROLLED RECTIFIERS
Data Sheet
0-1: $0.19
1-25: $0.16
25-100: $0.12
100-250: $0.09
BT169G,126
BT169G,126
NXP Semiconductors
SCRs AMMORA SCR
Data Sheet
0-1: $0.23
1-25: $0.18
25-100: $0.13
100-250: $0.09
BT169G AMO
BT169G AMO
NXP Semiconductors
SCRs AMMORA SCR
Data Sheet
Negotiable