Product Summary

The GT80J101 is a silicon N-channel MOS type insulated gate bipolar transistor designed for high power switching applications.

Parametrics

GT80J101 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600 V; (2)Gate-Emitter Voltage, VGES: ±20 V; (3)Collector Current, DC, IC: 80 A; 1ms, ICP: 160 A; (4)Collector Power Dissipation, (Tc = 25℃), PC: 200 W; (5)Junction Temperature, Tj: 150 ℃; (6)Storage Temperature Range, Tstg: -55 to 150 ℃.

Features

GT80J101 features: (1)High Input Impedance; (2)High Speed: tf = 0.40μs (Max.); (3)Low Saturation Voltage: VCE (sat) = 3.5V (Max.); (4)Enhancement-Mode.

Diagrams

GT80J101 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
GT80J101A
GT80J101A

Other


Data Sheet

Negotiable 
GT80J101B
GT80J101B

Other


Data Sheet

Negotiable 
GT80J101B(Q)
GT80J101B(Q)


IGBT 600V 80A TO-3P LH

Data Sheet

Negotiable